onsemi MMBTA56LT1G
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See Product Specifications.
See Product Specifications.
Stock Code 017891
017891
Manufacturer / Brand
onsemi Part Number MMBTA56LT1G
MMBTA56LT1G
Unit Price $0.1300
$0.1300
Factory Lead-Time 37 Weeks
37 Weeks
Short Description PNP bipolar junction transistor (BJT) with a maximum power dissipation of 350mW and a maximum collector current of 0.5A
PNP bipolar junction transistor (BJT) with a maximum power dissipation of 350mW and a maximum collector current of 0.5A
Datasheet
In Stock: 4933
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.1300 | $0.1300 | |
| 10 | $0.1200 | $1.2000 | -7.69% |
| 100 | $0.0655 | $6.5500 | -49.62% |
| 500 | $0.0403 | $20.1500 | -69% |
| 1000 | $0.0275 | $27.5000 | -78.85% |
Description
The ON Semiconductor MMBTA56LT1G is a PNP bipolar junction transistor with a maximum collector current capacity of 0.5A. This transistor is housed in the SOT-23 package and is designed for use in medium power amplifier and switching applications. The MMBTA56LT1G is fabricated using a 3-layer epitaxial process that results in stable electrical performance over a wide range of operating conditions.
This transistor also features a high current gain which makes it suitable for use in low noise, high gain amplifiers. Additionally, it has a low base-emitter saturation voltage which allows for low power dissipation, thereby making it energy efficient. The MMBTA56LT1G's high collector-emitter voltage capability and fast switching speed also make it ideal for use in high voltage switching applications. Overall, the ON Semiconductor MMBTA56LT1G is a versatile and reliable transistor that offers a range of benefits for use in a variety of electronic applications
This transistor also features a high current gain which makes it suitable for use in low noise, high gain amplifiers. Additionally, it has a low base-emitter saturation voltage which allows for low power dissipation, thereby making it energy efficient. The MMBTA56LT1G's high collector-emitter voltage capability and fast switching speed also make it ideal for use in high voltage switching applications. Overall, the ON Semiconductor MMBTA56LT1G is a versatile and reliable transistor that offers a range of benefits for use in a variety of electronic applications
Product Attributes
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power - Max | 225 mW |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
