Microsemi LSM115JE3/TR13

Microsemi - LSM115JE3/TR13

Stock Code
007821

Manufacturer / Brand

Part Number
LSM115JE3/TR13

Unit Price
$0.3770

Factory Lead-Time
10 Weeks

Short Description
5A, 50V N-Channel MOSFET in a Micro-Pak 8 package

In Stock: 148739


Qty Unit Price Total Price Discount
1 $0.3770 $0.3770
Description
The Microsemi LSM115JE3/TR13 is a high-performance, high-reliability Schottky barrier diode designed for use in a variety of applications, including power rectification, low voltage drop modules, and high-speed switching. This diode features a low forward voltage drop of 0.38V at 15A, making it ideal for use in power converters and DC-DC converters. Additionally, the LSM115JE3/TR13 offers a peak reverse voltage of 150V, a maximum average forward current of 15A, and a maximum forward surge current of 150A, providing ample headroom for a wide range of applications.

Constructed using a robust metal-to-silicon epitaxial technology, the LSM115JE3/TR13 provides excellent thermal stability and low forward voltage drop, making it an ideal choice for high-reliability applications. The diode also features a high-level ESD protection and is rated to withstand voltage transients of up to 6000V, ensuring reliable operation in harsh environments. Overall, the Microsemi LSM115JE3/TR13 is a versatile, high-performance Schottky barrier diode suitable for a wide range of applications requiring high efficiency and robustness
Product Attributes
Current - Average Rectified (Io) 1A
Current - Reverse Leakage @ Vr 10 mA @ 15 V
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C
Package / Case DO-214BA
Packaging Cut Tape (CT)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package DO-214BA
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 15 V
Voltage - Forward (Vf) (Max) @ If 220 mV @ 1 A

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