Microsemi LSM115JE3/TR13
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See Product Specifications.
See Product Specifications.
Stock Code
007821
007821
Manufacturer / Brand
Microsemi
Part Number
LSM115JE3/TR13
LSM115JE3/TR13
Categories
Unit Price
$0.3770
$0.3770
Factory Lead-Time
10 Weeks
10 Weeks
Short Description
5A, 50V N-Channel MOSFET in a Micro-Pak 8 package
5A, 50V N-Channel MOSFET in a Micro-Pak 8 package
Datasheet
In Stock: 148739
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.3770 | $0.3770 |
Description
The Microsemi LSM115JE3/TR13 is a high-performance, high-reliability Schottky barrier diode designed for use in a variety of applications, including power rectification, low voltage drop modules, and high-speed switching. This diode features a low forward voltage drop of 0.38V at 15A, making it ideal for use in power converters and DC-DC converters. Additionally, the LSM115JE3/TR13 offers a peak reverse voltage of 150V, a maximum average forward current of 15A, and a maximum forward surge current of 150A, providing ample headroom for a wide range of applications.
Constructed using a robust metal-to-silicon epitaxial technology, the LSM115JE3/TR13 provides excellent thermal stability and low forward voltage drop, making it an ideal choice for high-reliability applications. The diode also features a high-level ESD protection and is rated to withstand voltage transients of up to 6000V, ensuring reliable operation in harsh environments. Overall, the Microsemi LSM115JE3/TR13 is a versatile, high-performance Schottky barrier diode suitable for a wide range of applications requiring high efficiency and robustness
Constructed using a robust metal-to-silicon epitaxial technology, the LSM115JE3/TR13 provides excellent thermal stability and low forward voltage drop, making it an ideal choice for high-reliability applications. The diode also features a high-level ESD protection and is rated to withstand voltage transients of up to 6000V, ensuring reliable operation in harsh environments. Overall, the Microsemi LSM115JE3/TR13 is a versatile, high-performance Schottky barrier diode suitable for a wide range of applications requiring high efficiency and robustness
Product Attributes
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 10 mA @ 15 V |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package / Case | DO-214BA |
| Packaging | Cut Tape (CT) |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Supplier Device Package | DO-214BA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 15 V |
| Voltage - Forward (Vf) (Max) @ If | 220 mV @ 1 A |
