Infineon BSC320N20NS3 G
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See Product Specifications.
See Product Specifications.
Stock Code 000240
000240
Manufacturer / Brand
Infineon Part Number BSC320N20NS3 G
BSC320N20NS3 G
Unit Price $2.1800
$2.1800
Factory Lead-Time 58 Weeks
58 Weeks
Short Description Power MOSFET for advanced switching applications
Power MOSFET for advanced switching applications
Datasheet
In Stock: 1399
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $2.1800 | $2.1800 | |
| 10 | $1.9600 | $19.6000 | -10.09% |
| 100 | $1.6000 | $160.0000 | -26.61% |
| 500 | $1.3700 | $685.0000 | -37.16% |
| 1000 | $1.1500 | $1,150.0000 | -47.25% |
| 2000 | $1.0900 | $2,180.0000 | -50% |
Description
The Infineon BSC320N20NS3 G is a high efficiency power MOSFET designed for use in applications that require high performance and reliability. This MOSFET has a maximum voltage rating of 200 V and a continuous current rating of 320 A, making it suitable for use in a wide range of high power applications, such as electric vehicles and industrial equipment.
With its low RDS(on) of 20 mΩ, the BSC320N20NS3 G allows for efficient power conversion with minimal losses. The MOSFET is also designed to operate at high temperatures, making it suitable for use in high temperature environments. This MOSFET is available in a TO-263-7 package, making it easy to integrate into existing designs. Overall, the Infineon BSC320N20NS3 G is a reliable and efficient power MOSFET suitable for a wide range of high power applications
With its low RDS(on) of 20 mΩ, the BSC320N20NS3 G allows for efficient power conversion with minimal losses. The MOSFET is also designed to operate at high temperatures, making it suitable for use in high temperature environments. This MOSFET is available in a TO-263-7 package, making it easy to integrate into existing designs. Overall, the Infineon BSC320N20NS3 G is a reliable and efficient power MOSFET suitable for a wide range of high power applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 100 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 36A, 10V |
| Supplier Device Package | PG-TDSON-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
