Vishay IRFL110TRPBF

Vishay - IRFL110TRPBF

Stock Code
000327

Manufacturer / Brand

Part Number
IRFL110TRPBF

Unit Price
$0.6050

Factory Lead-Time
16 Weeks

Short Description
N-Channel Power MOSFET, 100V, 4.9A

In Stock: 47054


Qty Unit Price Total Price Discount
1 $0.6050 $0.6050
10 $0.5340 $5.3400 -11.74%
100 $0.4100 $41.0000 -32.23%
500 $0.4020 $201.0000 -33.55%
1000 $0.2590 $259.0000 -57.19%
Description
The IRFL110TRPBF is an N-channel MOSFET manufactured by Vishay. This semiconductor device is designed to work with low voltage circuits at high speeds. The device has a maximum voltage of 100V, enabling it to manage a broad range of applications such as power management, motor control, and load switching. It has a high power capability that enables it to handle up to 2.7W, making it a perfect component for high-performance amplifier circuits.

The IRFL110TRPBF is a surface-mount device that comes in a small form factor, making it easy to integrate into different types of circuits. The packaging of this MOSFET is tape and reel, which can hold up to 3000 pieces. The device has a maximum drain current of 3.3A, and its on-resistance is only 0.75ohm, as a result, it has low power dissipation and generates less heat. The IRFL110TRPBF has a fast switching speed, which makes it suitable for use in PWM applications. It comes with a gate threshold voltage of 1.0V and a gate-source breakdown voltage of +/- 20V, making it an efficient component for device protection
Product Attributes
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-261-4, TO-261AA
Packaging Cut Tape (CT)
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs 540mOhm @ 900mA, 10V
Supplier Device Package SOT-223
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 250µA

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