STMicroelectronics STP40N60M2
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code 007554
007554
Manufacturer / Brand
STMicroelectronics Part Number STP40N60M2
STP40N60M2
Unit Price $4.4000
$4.4000
Factory Lead-Time 52 Weeks
52 Weeks
Short Description N-channel power MOSFET for high voltage and current applications
N-channel power MOSFET for high voltage and current applications
In Stock: 1478
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $4.4000 | $4.4000 | |
| 10 | $3.9500 | $39.5000 | -10.23% |
| 100 | $3.2400 | $324.0000 | -26.36% |
| 500 | $2.7600 | $1,380.0000 | -37.27% |
| 1000 | $2.3200 | $2,320.0000 | -47.27% |
| 2000 | $2.2100 | $4,420.0000 | -49.77% |
Description
The STMicroelectronics STP40N60M2 is a power MOSFET transistor that is designed to handle high levels of electrical power. This device uses advanced technology to deliver a low on-resistance (Rds(on)) value of only 0.04Ω. It can handle a maximum continuous drain current of 40A, and a maximum peak drain current of 160A. The STP40N60M2 is also capable of handling voltages up to 600V, which makes it a suitable device for high power applications.
This MOSFET transistor is built using an advanced Trenchgate technology, which reduces the overall gate resistance and allows for fast switching speeds. The device also features a built-in thermal protection mechanism that automatically shuts down the device if it exceeds a certain temperature limit. The STP40N60M2 is housed in a TO-220 package that is designed for high power dissipation. With its high current and voltage handling capabilities, the STP40N60M2 is an ideal choice for power supplies, motor control, and other high-power applications
This MOSFET transistor is built using an advanced Trenchgate technology, which reduces the overall gate resistance and allows for fast switching speeds. The device also features a built-in thermal protection mechanism that automatically shuts down the device if it exceeds a certain temperature limit. The STP40N60M2 is housed in a TO-220 package that is designed for high power dissipation. With its high current and voltage handling capabilities, the STP40N60M2 is an ideal choice for power supplies, motor control, and other high-power applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 17A, 10V |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
