Infineon IPB044N15N5ATMA1

Infineon IPB044N15N5ATMA1 is a high-performance power MOSFET designed for high current and high power applications in industrial equipment, motor controls, and power management systems. It features a low on-resistance of 44 milliohms and a maximum drain-source voltage of 150V, making it suitable for use in a wide range of applications that require high efficiency and reliability.

The MOSFET's advanced TrenchStop 5 technology allows it to deliver low switching losses and fast switching speeds, improving overall system efficiency and reducing power consumption. The device also features a rugged design that can handle high-temperature environments, making it an ideal solution for demanding applications that require high performance and reliability

Current - Continuous Drain (Id) @ 25°C	174A (Tc)
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	8000 pF @ 75 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Packaging	Cut Tape (CT)
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	4.4mOhm @ 87A, 10V
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.6V @ 264µA