Infineon IRF7105TRPBF
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See Product Specifications.
See Product Specifications.
Stock Code
019780
019780
Manufacturer / Brand
Infineon
Part Number
IRF7105TRPBF
IRF7105TRPBF
Unit Price
$0.5850
$0.5850
Factory Lead-Time
12 Weeks
12 Weeks
Short Description
N-channel MOSFET for power switching applications
N-channel MOSFET for power switching applications
Datasheet
In Stock: 3414
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.5850 | $0.5850 | |
| 10 | $0.5150 | $5.1500 | -11.97% |
| 100 | $0.3950 | $39.5000 | -32.48% |
| 500 | $0.3120 | $156.0000 | -46.67% |
| 1000 | $0.2500 | $250.0000 | -57.26% |
| 2000 | $0.2260 | $452.0000 | -61.37% |
Description
The Infineon IRF7105TRPBF is a N-Channel MOSFET, designed for use in a wide range of high current and high voltage applications. It features a standard 3-pin TO-220 package, which allows for easy installation and integration into a variety of electronic systems. The MOSFET’s maximum current rating is 53A and its maximum voltage rating is 55V, making it ideal for use in many different types of power supplies, motor control circuits, and other high current applications.
The IRF7105TRPBF also features a low Gate Threshold Voltage, which means that it can be easily controlled by a variety of different microcontrollers and other low power control circuits. Additionally, the MOSFET has a low On-Resistance, which helps to reduce the power losses and heat generation associated with high current circuits. Overall, the Infineon IRF7105TRPBF is an excellent choice for designers looking to optimize their high current applications for maximum efficiency and reliable performance
The IRF7105TRPBF also features a low Gate Threshold Voltage, which means that it can be easily controlled by a variety of different microcontrollers and other low power control circuits. Additionally, the MOSFET has a low On-Resistance, which helps to reduce the power losses and heat generation associated with high current circuits. Overall, the Infineon IRF7105TRPBF is an excellent choice for designers looking to optimize their high current applications for maximum efficiency and reliable performance
Product Attributes
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Drain to Source Voltage (Vdss) | 25V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 15V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT) |
| Power - Max | 2W |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 10V |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
