Vishay SQJ461EP-T1_GE3
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See Product Specifications.
See Product Specifications.
Stock Code
024037
024037
Manufacturer / Brand
Vishay
Part Number
SQJ461EP-T1_GE3
SQJ461EP-T1_GE3
Unit Price
$1.8900
$1.8900
Factory Lead-Time
88 Weeks
88 Weeks
Short Description
N-channel MOSFET with 150V voltage rating and 2.7mohm on-resistance, housed in a PowerPAK® SO-8 package
N-channel MOSFET with 150V voltage rating and 2.7mohm on-resistance, housed in a PowerPAK® SO-8 package
Datasheet
In Stock: 4821
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.8900 | $1.8900 | |
| 10 | $1.7000 | $17.0000 | -10.05% |
| 100 | $1.3900 | $139.0000 | -26.46% |
| 500 | $1.1800 | $590.0000 | -37.57% |
| 1000 | $0.9990 | $999.0000 | -47.14% |
Description
Vishay SQJ461EP-T1_GE3 is a p-channel enhancement mode MOSFET transistor designed for applications that require a high-performance power switch with low on-resistance and fast switching speed. It is built on a high-temperature silicon process that ensures excellent performance at high temperatures, making it ideal for use in automotive, industrial, and high-temperature environments.
This MOSFET transistor features a maximum drain-source voltage of -20 V and a low on-resistance of 4.4 mOhm at a gate voltage of -10 V. It also has a gate-source threshold voltage of -1.5 V, ensuring proper operation over a wide range of gate drive voltages. Additionally, the Vishay SQJ461EP-T1_GE3 is designed to handle large peak currents, making it ideal for use as a power switch in battery management systems, DC-DC converters, and other power applications. Overall, this MOSFET transistor offers excellent performance, reliability, and durability, making it a great choice for demanding power applications
This MOSFET transistor features a maximum drain-source voltage of -20 V and a low on-resistance of 4.4 mOhm at a gate voltage of -10 V. It also has a gate-source threshold voltage of -1.5 V, ensuring proper operation over a wide range of gate drive voltages. Additionally, the Vishay SQJ461EP-T1_GE3 is designed to handle large peak currents, making it ideal for use as a power switch in battery management systems, DC-DC converters, and other power applications. Overall, this MOSFET transistor offers excellent performance, reliability, and durability, making it a great choice for demanding power applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4710 pF @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 83W (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 14.4A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
