onsemi 2N7002WT1G
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See Product Specifications.
See Product Specifications.
Stock Code
024038
024038
Manufacturer / Brand
onsemi
Part Number
2N7002WT1G
2N7002WT1G
Unit Price
$0.1430
$0.1430
Factory Lead-Time
90 Weeks
90 Weeks
Short Description
Small Signal MOSFET Transistor, N-Channel, 60V, 0.115A, SOT-23-3 Package
Small Signal MOSFET Transistor, N-Channel, 60V, 0.115A, SOT-23-3 Package
Datasheet
In Stock: 19426
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.1430 | $0.1430 | |
| 10 | $0.1160 | $1.1600 | -18.88% |
| 100 | $0.0617 | $6.1700 | -56.85% |
| 500 | $0.0406 | $20.3000 | -71.61% |
| 1000 | $0.0276 | $27.6000 | -80.7% |
Description
The ON Semiconductor 2N7002WT1G is a small signal MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed for use in applications where low voltage and low current are required. It has a maximum drain-source voltage of 60 volts and a maximum continuous drain current of 0.115 amperes.
This MOSFET has a low gate threshold voltage of only 2.5 volts, which allows it to be easily driven by low-level digital signals such as those produced by microcontrollers. This device also has a small form factor, making it particularly useful in applications with tight space constraints. Some common applications for the ON Semiconductor 2N7002WT1G include power management, battery charging, and signal amplification
This MOSFET has a low gate threshold voltage of only 2.5 volts, which allows it to be easily driven by low-level digital signals such as those produced by microcontrollers. This device also has a small form factor, making it particularly useful in applications with tight space constraints. Some common applications for the ON Semiconductor 2N7002WT1G include power management, battery charging, and signal amplification
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 310mA (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 24.5 pF @ 20 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SC-70, SOT-323 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 280mW (Tj) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
