Littelfuse IXTT20P50P
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See Product Specifications.
See Product Specifications.
Stock Code
028828
028828
Manufacturer / Brand
Littelfuse
Part Number
IXTT20P50P
IXTT20P50P
Unit Price
$8.5300
$8.5300
Factory Lead-Time
62 Weeks
62 Weeks
Short Description
High-power, high-efficiency IGBT transistor module for industrial applications
High-power, high-efficiency IGBT transistor module for industrial applications
Datasheet
In Stock: 1719
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $8.5300 | $8.5300 | |
| 10 | $7.8400 | $78.4000 | -8.09% |
| 100 | $6.6300 | $663.0000 | -22.27% |
| 500 | $5.8900 | $2,945.0000 | -30.95% |
| 1000 | $5.4100 | $5,410.0000 | -36.58% |
Description
The Littelfuse IXTT20P50P is a high power bipolar transistor module that is designed for use in a wide range of industrial applications. It features a low collector-to-emitter saturation voltage and a high emitter current capability, which makes it ideal for use in power supplies, motor control circuits, industrial lighting systems, and other high power applications.
This power module is rated at 200V and 50A, and features a built-in reverse diode for efficient switching performance. It has a compact, insulated package that provides a high level of isolation between the transistor and the mounting surface, ensuring safe and reliable operation. The IXTT20P50P is compatible with a variety of control circuitry, including TTL, CMOS, and LSTTL logic, and can be easily integrated into existing designs. Overall, this high-power bipolar transistor module is an excellent choice for demanding industrial applications that require efficient power control and reliable performance in harsh environments
This power module is rated at 200V and 50A, and features a built-in reverse diode for efficient switching performance. It has a compact, insulated package that provides a high level of isolation between the transistor and the mounting surface, ensuring safe and reliable operation. The IXTT20P50P is compatible with a variety of control circuitry, including TTL, CMOS, and LSTTL logic, and can be easily integrated into existing designs. Overall, this high-power bipolar transistor module is an excellent choice for demanding industrial applications that require efficient power control and reliable performance in harsh environments
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5120 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Packaging | Tube |
| Power Dissipation (Max) | 460W (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 10A, 10V |
| Supplier Device Package | TO-268AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
