STMicroelectronics STP77N6F6
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See Product Specifications.
See Product Specifications.
Stock Code
031116
031116
Manufacturer / Brand
STMicroelectronics
Part Number
STP77N6F6
STP77N6F6
Unit Price
$0.9880
$0.9880
Factory Lead-Time
8 Weeks
8 Weeks
Short Description
Power MOSFET Transistor
Power MOSFET Transistor
In Stock: 783
Qty | Unit Price | Total Price | Discount |
---|---|---|---|
1 | $0.9880 | $0.9880 | |
10 | $0.8820 | $8.8200 | -10.73% |
100 | $0.6880 | $68.8000 | -30.36% |
500 | $0.5680 | $284.0000 | -42.51% |
1000 | $0.4490 | $449.0000 | -54.55% |
Description
The STMicroelectronics STP77N6F6 is a power MOSFET transistor designed to withstand high voltage and high current loads in various applications. This particular transistor has a maximum drain-source voltage rating of 60V and a maximum continuous drain current rating of 75A. The device has very low on-state resistance, resulting in less power dissipation and reducing the need for heatsinks.
The STP77N6F6 uses advanced silicon technology that enables it to operate efficiently even at high temperatures. The transistor is housed in a TO-220 package, which allows for easy mounting and dismounting. The STP77N6F6 is commonly used in power conversion systems, motor control circuits, and other high-current applications. This high-quality component offers high reliability and long operational life, making it a popular choice among engineers and designers of complex electrical systems
The STP77N6F6 uses advanced silicon technology that enables it to operate efficiently even at high temperatures. The transistor is housed in a TO-220 package, which allows for easy mounting and dismounting. The STP77N6F6 is commonly used in power conversion systems, motor control circuits, and other high-current applications. This high-quality component offers high reliability and long operational life, making it a popular choice among engineers and designers of complex electrical systems
Product Attributes
Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
Drain to Source Voltage (Vdss) | 60 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package / Case | TO-220-3 |
Packaging | Tube |
Part Status | Obsolete |
Power Dissipation (Max) | 80W (Tc) |
Rds On (Max) @ Id, Vgs | 7mOhm @ 38.5A, 10V |
Supplier Device Package | TO-220 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |