onsemi FDD4685
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
031642
031642
Manufacturer / Brand
onsemi
Part Number
FDD4685
FDD4685
Unit Price
$0.9750
$0.9750
Factory Lead-Time
39 Weeks
39 Weeks
Short Description
N-Channel Power MOSFET, 60V, 72A
N-Channel Power MOSFET, 60V, 72A
Datasheet
In Stock: 3931
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.9750 | $0.9750 | |
| 10 | $0.8750 | $8.7500 | -10.26% |
| 100 | $0.6820 | $68.2000 | -30.05% |
| 500 | $0.5620 | $281.0000 | -42.36% |
| 1000 | $0.4490 | $449.0000 | -53.95% |
| 2500 | $0.4150 | $1,037.5000 | -57.44% |
Description
The Onsemi FDD4685 is a power MOSFET, designed for use in power management applications. The MOSFET features a low on-resistance, enabling fast switching and efficient power conversion. The device has a voltage rating of 60V and a maximum continuous drain current of 24A. The MOSFET is constructed using ON Semiconductor's advanced MOSFET process technology, which results in a device with low gate charge and low thermal resistance.
The device is housed in a TO-252-3 package, which is ideal for use in space-constrained designs. The package includes a copper leadframe, which helps to dissipate heat away from the device, and a plastic body that provides excellent protection from mechanical damage. The MOSFET features a built-in body diode that allows for fast recovery during switched-mode power supply operation. The Onsemi FDD4685 is an excellent choice for designers looking for a reliable and efficient power MOSFET for use in their power management applications
The device is housed in a TO-252-3 package, which is ideal for use in space-constrained designs. The package includes a copper leadframe, which helps to dissipate heat away from the device, and a plastic body that provides excellent protection from mechanical damage. The MOSFET features a built-in body diode that allows for fast recovery during switched-mode power supply operation. The Onsemi FDD4685 is an excellent choice for designers looking for a reliable and efficient power MOSFET for use in their power management applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 32A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2380 pF @ 20 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 69W (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 8.4A, 10V |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
