Infineon IRF1310NSTRLPBF
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See Product Specifications.
See Product Specifications.
Stock Code
032000
032000
Manufacturer / Brand
Infineon
Part Number
IRF1310NSTRLPBF
IRF1310NSTRLPBF
Unit Price
$1.6500
$1.6500
Factory Lead-Time
16 Weeks
16 Weeks
Short Description
Power MOSFET with N-channel and 100V maximum VDS rating
Power MOSFET with N-channel and 100V maximum VDS rating
Datasheet
In Stock: 2489
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.6500 | $1.6500 | |
| 10 | $1.4800 | $14.8000 | -10.3% |
| 100 | $1.1900 | $119.0000 | -27.88% |
Description
The Infineon IRF1310NSTRLPBF is a power MOSFET transistor designed to operate at a maximum voltage of 100V and a continuous current of 60A. It features a low on-resistance of 9.5mOhms, which helps to reduce the power dissipation during operation. The device is packed in a TO-263-7L package, which provides a low thermal resistance and high power dissipation capability.
The MOSFET features advanced trench gate and field stop technologies which enhance its performance and reliability. The device also has a low gate charge and input capacitance, which help to reduce the switching losses and improve the efficiency of the power converter circuit. The Infineon IRF1310NSTRLPBF power MOSFET is suitable for use in high current and voltage applications, such as power supplies, motor control, and automotive systems
The MOSFET features advanced trench gate and field stop technologies which enhance its performance and reliability. The device also has a low gate charge and input capacitance, which help to reduce the switching losses and improve the efficiency of the power converter circuit. The Infineon IRF1310NSTRLPBF power MOSFET is suitable for use in high current and voltage applications, such as power supplies, motor control, and automotive systems
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 3.8W (Ta), 160W (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 22A, 10V |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
