Diodes BSS84-7-F
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See Product Specifications.
See Product Specifications.
Stock Code
032047
032047
Manufacturer / Brand
Diodes
Part Number
BSS84-7-F
BSS84-7-F
Unit Price
$0.1630
$0.1630
Factory Lead-Time
52 Weeks
52 Weeks
Short Description
Field Effect Transistor (FET) - P-Ch, 50V, 130mA, SOT-23
Field Effect Transistor (FET) - P-Ch, 50V, 130mA, SOT-23
Datasheet
In Stock: 261223
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.1630 | $0.1630 | |
| 10 | $0.1350 | $1.3500 | -17.18% |
| 100 | $0.0716 | $7.1600 | -56.07% |
| 500 | $0.0471 | $23.5500 | -71.1% |
| 1000 | $0.0320 | $32.0000 | -80.37% |
Description
The BSS84-7-F diode is a small-signal field-effect transistor (FET) that functions as a switch. It is typically used as a load switch, battery protection, or in low-voltage applications where power dissipation is of concern. This diode is housed in a SOT-23 surface mount package, making it easy to integrate into compact designs.
The BSS84-7-F diode has a maximum drain-source voltage of 50 volts and a maximum continuous drain current of 130 mA. It has a low gate threshold voltage of between 0.8 and 1.6 volts, making it suitable for low-voltage applications. The diode has a low on-resistance of 5.5 ohms and a fast switching speed, leading to minimal power dissipation. Additionally, it has a low leakage current of only 10 nA, ensuring energy efficiency. The small size and low power dissipation make the BSS84-7-F a popular choice in portable devices, as well as other low-voltage electronic applications
The BSS84-7-F diode has a maximum drain-source voltage of 50 volts and a maximum continuous drain current of 130 mA. It has a low gate threshold voltage of between 0.8 and 1.6 volts, making it suitable for low-voltage applications. The diode has a low on-resistance of 5.5 ohms and a fast switching speed, leading to minimal power dissipation. Additionally, it has a low leakage current of only 10 nA, ensuring energy efficiency. The small size and low power dissipation make the BSS84-7-F a popular choice in portable devices, as well as other low-voltage electronic applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 130mA (Ta) |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 300mW (Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
