onsemi FDMS86263P
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
033143
033143
Manufacturer / Brand
onsemi
Part Number
FDMS86263P
FDMS86263P
Unit Price
$2.0000
$2.0000
Factory Lead-Time
57 Weeks
57 Weeks
Short Description
PowerTrench MOSFET for high-performance switching applications
PowerTrench MOSFET for high-performance switching applications
Datasheet
In Stock: 1936
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $2.0000 | $2.0000 | |
| 10 | $1.8000 | $18.0000 | -10% |
| 100 | $1.4800 | $148.0000 | -26% |
| 500 | $1.2600 | $630.0000 | -37% |
| 1000 | $1.0600 | $1,060.0000 | -47% |
Description
The ON Semiconductor FDMS86263P is a power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed specifically for use in advanced power management applications. It features an exceptional combination of low on-state resistance (RDS(ON)) and fast switching speeds, making it ideal for use in hard-switched and high-frequency power converter designs.
This MOSFET is built using industry-leading techniques and materials, resulting in a device that exhibits excellent thermal performance, high reliability, and stable operation over a wide temperature range. The FDMS86263P is housed in a compact and robust Power33 package, making it suitable for use in space-constrained applications such as notebooks, servers, and DC-DC converters. Overall, the ON Semiconductor FDMS86263P is an excellent choice for designers looking to optimize power conversion efficiency and improve overall system performance
This MOSFET is built using industry-leading techniques and materials, resulting in a device that exhibits excellent thermal performance, high reliability, and stable operation over a wide temperature range. The FDMS86263P is housed in a compact and robust Power33 package, making it suitable for use in space-constrained applications such as notebooks, servers, and DC-DC converters. Overall, the ON Semiconductor FDMS86263P is an excellent choice for designers looking to optimize power conversion efficiency and improve overall system performance
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 22A (Tc) |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3905 pF @ 75 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 4.4A, 10V |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
