onsemi FDMS86163P-23507X

The ON Semiconductor FDMS86163P-23507X is a powerful, high-performance power MOSFET designed for use in a wide range of electronic applications. This MOSFET is designed to operate at very high power levels, making it ideal for use in high-power applications such as motor control, power supplies, and industrial control systems. With its advanced design and high-performance features, this MOSFET is capable of delivering exceptional performance and reliability in even the most demanding applications.

Some of the key features of the FDMS86163P-23507X include a high maximum current rating of 200A, a low on-state resistance of just 0.0024 ohms, and a high thermal conductivity. These features make it ideal for use in a wide range of applications where high power levels and efficient operation are critical. In addition to its high-performance specifications, this MOSFET also features a rugged and reliable construction, making it ideal for use in harsh environments and applications where reliability is critical. Overall, the ON Semiconductor FDMS86163P-23507X is a powerful and versatile MOSFET that offers exceptional performance and reliability in a wide range of electronic applications

Current - Continuous Drain (Id) @ 25°C	7.9A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4085 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Packaging	Tape & Reel (TR)
Power Dissipation (Max)	2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs	22mOhm @ 7.9A, 10V
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	4V @ 250µA