Infineon ISS17EP06LMXTSA1

Infineon ISS17EP06LMXTSA1 is a high power density MOSFET module designed for use in high frequency switching applications such as DC-DC converters, switch-mode power supplies and motor drive applications. This module features a low thermal resistance and low conduction losses, allowing for high efficiency and thermal performance. It has a maximum blocking voltage of 600V, and a maximum continuous current of 17A. The device incorporates a number of protection features such as a fast intrinsic diode and overtemperature protection. It is housed in a TO-263-7 package with a surface mount module footprint, making it easy to mount on PCBs.

The Infineon ISS17EP06LMXTSA1 MOSFET module has been optimized for use in high frequency switching applications, capable of operating at frequencies up to 2MHz. This module is built using Infineon's CoolMOS technology, which ensures high voltage capability while maintaining a low on-state resistance. The module's low thermal resistance and low conduction losses also result in a high power density rating, making it ideal for use in high power applications. The module incorporates a number of protection features such as overcurrent protection and overtemperature protection, ensuring safe operation under all conditions. The device is also RoHS compliant, making it an environmentally friendly and sustainable choice for power electronics

Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	55 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Cut Tape (CT)
Power Dissipation (Max)	360mW (Ta)
Rds On (Max) @ Id, Vgs	1.7Ohm @ 300mA, 10V
Supplier Device Package	PG-SOT23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 34µA