Infineon IRLML0040TRPBF
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See Product Specifications.
See Product Specifications.
Stock Code
033680
033680
Manufacturer / Brand
Infineon
Part Number
IRLML0040TRPBF
IRLML0040TRPBF
Unit Price
$0.2730
$0.2730
Factory Lead-Time
22 Weeks
22 Weeks
Short Description
MOSFET transistor, N-channel, 40V, 4A, SOT-23 package
MOSFET transistor, N-channel, 40V, 4A, SOT-23 package
Datasheet
In Stock: 8364
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.2730 | $0.2730 | |
| 10 | $0.2330 | $2.3300 | -14.65% |
| 100 | $0.1740 | $17.4000 | -36.26% |
| 500 | $0.1370 | $68.5000 | -49.82% |
| 1000 | $0.1060 | $106.0000 | -61.17% |
Description
Infineon IRLML0040TRPBF is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed to provide low on-state resistance, high switching speed and efficiency. With a maximum drain-source voltage of 40V and a continuous drain current of 5.3A, this MOSFET is suitable for use in a wide range of applications including power management, battery charging, LED lighting, DC/DC converters and motor control.
The transistor features a small footprint SOT-23 package, which enables it to be used in space-constrained designs. It has an ultra-low gate threshold voltage, which reduces the required drive voltage and power dissipation. Additionally, it has a low gate charge, which reduces switching losses and increases efficiency. With a low on-state resistance, it allows for higher power density designs without generating excessive heat. The Infineon IRLML0040TRPBF also integrates a body diode, which provides protection against inductive switching transients. All these features make it a popular choice for designers looking for a high-performance MOSFET for their applications
The transistor features a small footprint SOT-23 package, which enables it to be used in space-constrained designs. It has an ultra-low gate threshold voltage, which reduces the required drive voltage and power dissipation. Additionally, it has a low gate charge, which reduces switching losses and increases efficiency. With a low on-state resistance, it allows for higher power density designs without generating excessive heat. The Infineon IRLML0040TRPBF also integrates a body diode, which provides protection against inductive switching transients. All these features make it a popular choice for designers looking for a high-performance MOSFET for their applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 266 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 3.6A, 10V |
| Supplier Device Package | Micro3™/SOT-23 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.5V @ 25µA |
