Diodes DMN61D8L-7
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
034556
034556
Manufacturer / Brand
Diodes
Part Number
DMN61D8L-7
DMN61D8L-7
Unit Price
$0.2730
$0.2730
Factory Lead-Time
43 Weeks
43 Weeks
Short Description
Dual N-Channel Mosfet
Dual N-Channel Mosfet
Datasheet
In Stock: 11504
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.2730 | $0.2730 | |
| 10 | $0.2340 | $2.3400 | -14.29% |
| 100 | $0.1750 | $17.5000 | -35.9% |
| 500 | $0.1370 | $68.5000 | -49.82% |
| 1000 | $0.1060 | $106.0000 | -61.17% |
| 10000 | $0.0852 | $852.0000 | -68.79% |
Description
The Diodes DMN61D8L-7 is a P-channel MOSFET transistor that comes in a compact SOT-23 package. This transistor has a low voltage threshold of -0.5V, meaning that it can be easily driven by microcontrollers and other digital circuits with low output voltage. The DMN61D8L-7 has an on-state resistance of 450mOhm, which permits larger current flow with minimal power dissipation. It has a drain-source voltage rating of -20V and a continuous forward current rating of -400mA. Therefore, this transistor is ideal for use in low-voltage applications that require a low Rds(on) to reduce power losses and maximize efficiency.
Furthermore, the DMN61D8L-7 transistor has a low gate-source leakage current rating of -1nA and a high static drain-source breakdown voltage. This makes it suitable for use in low-power mode circuits where dynamic power consumption is to be minimized. Moreover, with the help of its split gate design and single underside cooling pad, it offers excellent thermal performance, significantly reducing the risk of overheating and component failure. Overall, the DMN61D8L-7 transistor is an excellent choice for electronic engineers who require reliable and efficient MOSFETs in their applications
Furthermore, the DMN61D8L-7 transistor has a low gate-source leakage current rating of -1nA and a high static drain-source breakdown voltage. This makes it suitable for use in low-power mode circuits where dynamic power consumption is to be minimized. Moreover, with the help of its split gate design and single underside cooling pad, it offers excellent thermal performance, significantly reducing the risk of overheating and component failure. Overall, the DMN61D8L-7 transistor is an excellent choice for electronic engineers who require reliable and efficient MOSFETs in their applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 470mA (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 5V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.74 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12.9 pF @ 12 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 390mW (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 150mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
