Vishay SI3476DV-T1-GE3
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
034561
034561
Manufacturer / Brand
Vishay
Part Number
SI3476DV-T1-GE3
SI3476DV-T1-GE3
Unit Price
$0.3570
$0.3570
Factory Lead-Time
83 Weeks
83 Weeks
Short Description
High-side power switch with integrated protection features
High-side power switch with integrated protection features
Datasheet
In Stock: 2226
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.3570 | $0.3570 | |
| 10 | $0.3070 | $3.0700 | -14.01% |
| 100 | $0.2290 | $22.9000 | -35.85% |
| 500 | $0.1800 | $90.0000 | -49.58% |
| 1000 | $0.1460 | $146.0000 | -59.1% |
| 3000 | $0.1300 | $390.0000 | -63.59% |
Description
The Vishay SI3476DV-T1-GE3 is a power MOSFET that is designed for use in medium voltage applications. This device offers low on-resistance and high thermal conductivity, making it ideal for use in a wide variety of applications where efficiency and power management are critical. The Vishay SI3476DV-T1-GE3 has a maximum operating voltage of 30V and is capable of handling up to 31A of continuous current.
The device features a standard gate-source voltage of 10V, and on-resistance of 1.5mΩ at a gate-source voltage of 4.5V. The Vishay SI3476DV-T1-GE3 is also designed with a low threshold voltage, which helps to reduce power consumption and minimize heat generated by the device. Additionally, this device boasts a single-pulse avalanche energy rating, meaning it is able to withstand high-energy spikes without experiencing damage. Finally, the Vishay SI3476DV-T1-GE3 is offered in a surface-mount TO-252 (DPAK) package, making it easy to integrate into a wide variety of applications
The device features a standard gate-source voltage of 10V, and on-resistance of 1.5mΩ at a gate-source voltage of 4.5V. The Vishay SI3476DV-T1-GE3 is also designed with a low threshold voltage, which helps to reduce power consumption and minimize heat generated by the device. Additionally, this device boasts a single-pulse avalanche energy rating, meaning it is able to withstand high-energy spikes without experiencing damage. Finally, the Vishay SI3476DV-T1-GE3 is offered in a surface-mount TO-252 (DPAK) package, making it easy to integrate into a wide variety of applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 40 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 2W (Ta), 3.6W (Tc) |
| Rds On (Max) @ Id, Vgs | 93mOhm @ 3.5A, 10V |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
