Vishay SQD50P06-15L_GE3

Vishay - SQD50P06-15L_GE3

Stock Code
034566

Manufacturer / Brand

Part Number
SQD50P06-15L_GE3

Unit Price
$1.8900

Factory Lead-Time
75 Weeks

Short Description
50A, 60V, P-Channel MOSFET

In Stock: 973


Qty Unit Price Total Price Discount
1 $1.8900 $1.8900
10 $1.7000 $17.0000 -10.05%
100 $1.3900 $139.0000 -26.46%
500 $1.1800 $590.0000 -37.57%
1000 $0.9990 $999.0000 -47.14%
Description
Vishay SQD50P06-15L_GE3 is a P-channel MOSFET integrated circuit that operates with a voltage range of -60V to +20V. It has a drain-source voltage of 60V and gate-source voltage of +/-20V, with a continuous drain current of 50A. The device features a low on-resistance, which helps in minimizing switching losses and efficient power management in High-Frequency SMPS, DC-DC Converters, and other power supplies. It has an input capacitance of 8600pF, allowing for faster switching times and stable operation.

The MOSFET is housed in a D-PAK package, which has a three-pin configuration and provides thermal and electrical conductivity. The device has a thermal resistance of 2.1 °C/W, which helps to dissipate heat generated during operation. This feature makes this MOSFET more rugged and reliable in harsh environments. Vishay SQD50P06-15L_GE3 is RoHS (Restriction of Hazardous Substances) compliant, which makes it an environmentally friendly choice. Due to its superior performance and durability, it is widely used in power management applications where efficiency and reliability are critical factors
Product Attributes
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 5910 pF @ 25 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Cut Tape (CT)
Power Dissipation (Max) 136W (Tc)
Rds On (Max) @ Id, Vgs 15.5mOhm @ 17A, 10V
Supplier Device Package TO-252AA
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.5V @ 250µA

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