Vishay SQ2310ES-T1-GE3

The Vishay SQ2310ES-T1-GE3 is a surface-mount Schottky rectifier designed to meet the demands of high-efficiency power applications. With its low forward voltage drop and excellent high-temperature stability, this device is ideal for use in power supply designs, automotive applications, and other high-power circuits. The rectifier features a maximum forward voltage of 0.37V at 3A and a maximum reverse current of 1μA at 30V, making it highly efficient and reliable even under high-load conditions. The Vishay SQ2310ES-T1-GE3 is available in a TO-263 package and can be used in a variety of applications that require high-performance rectification.

The Vishay SQ2310ES-T1-GE3 Schottky rectifier is built using advanced silicon technology to ensure exceptional performance even under harsh operating conditions. It features a maximum junction temperature of 125°C, which makes it suitable for use in high-temperature environments. The rectifier is also lead-free and RoHS compliant, making it environmentally friendly and safe to use. Additionally, the SQ2310ES-T1-GE3 rectifier is designed to be surface-mounted, which makes it easy to integrate into a wide range of circuit designs. Overall, this rectifier is a reliable and versatile solution for power supply designs, automotive applications, and other high-power circuits that demand performance and efficiency

Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	485 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Cut Tape (CT)
Power Dissipation (Max)	2W (Tc)
Rds On (Max) @ Id, Vgs	30mOhm @ 5A, 4.5V
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 250µA