Vishay SQJ409EP-T1_GE3
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See Product Specifications.
See Product Specifications.
Stock Code
034587
034587
Manufacturer / Brand
Vishay
Part Number
SQJ409EP-T1_GE3
SQJ409EP-T1_GE3
Unit Price
$0.9690
$0.9690
Factory Lead-Time
81 Weeks
81 Weeks
Short Description
N-channel MOSFET power transistor
N-channel MOSFET power transistor
Datasheet
In Stock: 3257
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.9690 | $0.9690 | |
| 10 | $0.8670 | $8.6700 | -10.53% |
| 100 | $0.6760 | $67.6000 | -30.24% |
| 500 | $0.5590 | $279.5000 | -42.31% |
| 1000 | $0.4410 | $441.0000 | -54.49% |
Description
Vishay SQJ409EP-T1_GE3 is a surface-mounted power MOSFET (metal-oxide-semiconductor field-effect transistor) with an advanced trench process technology. It is designed for high-efficiency applications that require low on-state resistance and fast switching speeds. The MOSFET features a drain-source voltage rating of 40 V, a continuous drain current of 50 A, and a maximum on-state resistance of 4.09 mΩ at a gate-source voltage of 10 V.
The Vishay SQJ409EP-T1_GE3 MOSFET operates within a temperature range of -55°C to 175°C and is housed in a PowerPAK SO-8 package. The device has a high power dissipation capability and is suitable for use in power supply circuits, motor drive circuits, and other high-current switching applications. The MOSFET also features a gate-source voltage rating of ±20 V and an input capacitance of 2480 pF, making it easy to drive with standard logic-level signals. With its advanced technology and high-performance specifications, the Vishay SQJ409EP-T1_GE3 is an ideal component for demanding applications that require fast switching speeds and low power dissipation
The Vishay SQJ409EP-T1_GE3 MOSFET operates within a temperature range of -55°C to 175°C and is housed in a PowerPAK SO-8 package. The device has a high power dissipation capability and is suitable for use in power supply circuits, motor drive circuits, and other high-current switching applications. The MOSFET also features a gate-source voltage rating of ±20 V and an input capacitance of 2480 pF, making it easy to drive with standard logic-level signals. With its advanced technology and high-performance specifications, the Vishay SQJ409EP-T1_GE3 is an ideal component for demanding applications that require fast switching speeds and low power dissipation
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 68W (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 10A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
