Infineon IPD90N10S4L06ATMA1
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See Product Specifications.
See Product Specifications.
Stock Code
034609
034609
Manufacturer / Brand
Infineon
Part Number
IPD90N10S4L06ATMA1
IPD90N10S4L06ATMA1
Unit Price
$1.8100
$1.8100
Factory Lead-Time
52 Weeks
52 Weeks
Short Description
Power MOSFET for high efficiency applications
Power MOSFET for high efficiency applications
In Stock: 3903
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.8100 | $1.8100 | |
| 10 | $1.6300 | $16.3000 | -9.94% |
| 100 | $1.3100 | $131.0000 | -27.62% |
| 500 | $1.0700 | $535.0000 | -40.88% |
| 1000 | $0.8900 | $890.0000 | -50.83% |
Description
The Infineon IPD90N10S4L06ATMA1 is a power MOSFET transistor that is designed to handle high voltages and currents. Its maximum drain-source voltage is 100V, and its maximum continuous drain current is 90A. This makes it ideal for use in high-power applications such as motor control, power supplies, and automotive systems.
One of the key features of this MOSFET is its low on-resistance, which is specified at 6mΩ. This means that it is highly efficient and generates minimal heat, which is important in high-power applications where heat dissipation can be a significant issue. Additionally, the MOSFET has a fast switching speed, which makes it suitable for use in high-frequency applications.
Overall, the Infineon IPD90N10S4L06ATMA1 provides high-performance and efficiency for demanding power applications. Its low on-resistance and fast switching speed make it an excellent choice for high-power systems where performance and efficiency are critical
One of the key features of this MOSFET is its low on-resistance, which is specified at 6mΩ. This means that it is highly efficient and generates minimal heat, which is important in high-power applications where heat dissipation can be a significant issue. Additionally, the MOSFET has a fast switching speed, which makes it suitable for use in high-frequency applications.
Overall, the Infineon IPD90N10S4L06ATMA1 provides high-performance and efficiency for demanding power applications. Its low on-resistance and fast switching speed make it an excellent choice for high-power systems where performance and efficiency are critical
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 136W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 90A, 10V |
| Supplier Device Package | PG-TO252-3-313 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.1V @ 90µA |
