Vishay SQJ960EP-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
035200
035200
Manufacturer / Brand
Vishay
Part Number
SQJ960EP-T1-GE3
SQJ960EP-T1-GE3
Unit Price
$1.4100
$1.4100
Factory Lead-Time
66 Weeks
66 Weeks
Short Description
N-channel MOSFET with a 60V maximum drain-source voltage and 0.004ohm typical on-resistance
N-channel MOSFET with a 60V maximum drain-source voltage and 0.004ohm typical on-resistance
Datasheet
In Stock: 27640
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.4100 | $1.4100 | |
| 10 | $1.2700 | $12.7000 | -9.93% |
| 100 | $1.0200 | $102.0000 | -27.66% |
| 500 | $0.8370 | $418.5000 | -40.64% |
| 1000 | $0.6930 | $693.0000 | -50.85% |
Description
The Vishay SQJ960EP-T1-GE3 is a MOSFET transistor designed for use in power management applications. It has a maximum rated voltage of 600 volts and a maximum current of 11 amperes. The transistor is housed in a surface mount package that conforms to the standard SOIC-8 form factor.
The device features a low on-resistance of 0.96 ohms, making it ideal for use in power switch applications where low losses are critical. It also has a low gate charge and a fast switching speed, making it suitable for high frequency switching applications. Additionally, the MOSFET has a built-in protection diode that prevents damage from reverse voltage spikes. Overall, the Vishay SQJ960EP-T1-GE3 MOSFET transistor is a reliable and efficient solution for power management applications that require high performance and reliability
The device features a low on-resistance of 0.96 ohms, making it ideal for use in power switch applications where low losses are critical. It also has a low gate charge and a fast switching speed, making it suitable for high frequency switching applications. Additionally, the MOSFET has a built-in protection diode that prevents damage from reverse voltage spikes. Overall, the Vishay SQJ960EP-T1-GE3 MOSFET transistor is a reliable and efficient solution for power management applications that require high performance and reliability
Product Attributes
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 735pF @ 25V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | PowerPAK® SO-8 Dual |
| Packaging | Cut Tape (CT) |
| Power - Max | 34W |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.3A, 10V |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
