Infineon IPDQ60R010S7AXTMA1
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See Product Specifications.
See Product Specifications.
Stock Code
035275
035275
Manufacturer / Brand
Infineon
Part Number
IPDQ60R010S7AXTMA1
IPDQ60R010S7AXTMA1
Unit Price
$21.1800
$21.1800
Factory Lead-Time
52 Weeks
52 Weeks
Short Description
60V 10A MOSFET in D²PAK with integrated diode and improved avalanche ruggedness
60V 10A MOSFET in D²PAK with integrated diode and improved avalanche ruggedness
In Stock: 577
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $21.1800 | $21.1800 | |
| 10 | $19.5400 | $195.4000 | -7.74% |
| 25 | $18.6600 | $466.5000 | -11.9% |
| 100 | $16.6800 | $1,668.0000 | -21.25% |
| 250 | $15.9200 | $3,980.0000 | -24.83% |
Description
The Infineon IPDQ60R010S7AXTMA1 is a powerful double-diffused MOSFET transistor that offers high performance and reliability in a compact package. It features a low on-state resistance, making it ideal for use in power applications that demand high efficiency and low power loss. Additionally, the device is designed to operate at high frequencies, making it suitable for use in advanced power system applications.
The Infineon IPDQ60R010S7AXTMA1 is manufactured using advanced process technologies that ensure a high level of consistency and quality, ensuring that it performs to its fullest potential. Its small size also makes it easy to integrate into diverse applications, including power supplies, converters, and inverters. With its high performance specifications, the Infineon IPDQ60R010S7AXTMA1 is an excellent choice for any application that requires reliable, efficient, and high-speed power conversion
The Infineon IPDQ60R010S7AXTMA1 is manufactured using advanced process technologies that ensure a high level of consistency and quality, ensuring that it performs to its fullest potential. Its small size also makes it easy to integrate into diverse applications, including power supplies, converters, and inverters. With its high performance specifications, the Infineon IPDQ60R010S7AXTMA1 is an excellent choice for any application that requires reliable, efficient, and high-speed power conversion
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 318 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11987 pF @ 300 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | 22-PowerBSOP Module |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 694W (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 12V |
| Supplier Device Package | PG-HDSOP-22-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 3.08mA |
