onsemi FDMS86255

onsemi - FDMS86255

Stock Code
037218

Manufacturer / Brand

Part Number
FDMS86255

Unit Price
$2.8500

Factory Lead-Time
26 Weeks

Short Description
PowerTrench MOSFET for high efficiency power management applications

In Stock: 13940


Qty Unit Price Total Price Discount
1 $2.8500 $2.8500
10 $2.5600 $25.6000 -10.18%
100 $2.0900 $209.0000 -26.67%
500 $1.7800 $890.0000 -37.54%
1000 $1.5000 $1,500.0000 -47.37%
Description
Onsemi FDMS86255 is a power MOSFET transistor designed to provide high performance in a small package. The device features a low on-resistance of just 3.7mOhm, which helps to reduce power losses during operation. The transistor also features a high current rating of 30A, making it suitable for a range of applications. Onsemi FDMS86255 uses advanced silicon technology to ensure high levels of performance and reliability. The device is available in a compact 5x6mm Power33 package, which is well-suited for use in space-constrained applications.

The Onsemi FDMS86255 MOSFET transistor offers a range of protection features to safeguard it against overcurrent, over-temperature, and other common fault conditions. These include thermal shutdown, over-current protection, and ESD protection. The device also features a low gate charge, which reduces switching losses and improves overall efficiency. Onsemi FDMS86255 is well-suited for use in a range of applications, including power supplies, DC-DC converters, motor drives, and lighting applications. Overall, this high-performance MOSFET transistor is an excellent choice for anyone looking for a compact, efficient, and reliable solution for their power management needs
Product Attributes
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss) 150 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4480 pF @ 75 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 8-PowerTDFN
Packaging Cut Tape (CT)
Power Dissipation (Max) 2.7W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs 12.4mOhm @ 10A, 10V
Supplier Device Package 8-PQFN (5x6)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 250µA

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