STMicroelectronics STP80NF70

STMicroelectronics - STP80NF70

Stock Code
039234

Manufacturer / Brand

Part Number
STP80NF70

Unit Price
$1.5100

Factory Lead-Time
80 Weeks

Short Description
Power MOSFET transistor with a voltage rating of 700V and a maximum current rating of 80A

In Stock: 392


Qty Unit Price Total Price Discount
1 $1.5100 $1.5100
10 $1.3500 $13.5000 -10.6%
100 $1.0900 $109.0000 -27.81%
500 $0.8930 $446.5000 -40.86%
1000 $0.7400 $740.0000 -50.99%
2000 $0.6890 $1,378.0000 -54.37%
5000 $0.6640 $3,320.0000 -56.03%
10000 $0.6470 $6,470.0000 -57.15%
Description
The ST STP80NF70 is a power MOSFET transistor that provides for high efficiency and low switching losses in power applications. It is designed to operate with a wide range of voltages, with a maximum drain-source voltage of 700V. The transistor has a low on-state resistance, making it ideal for use in high current applications, and it features fast switching times to reduce power losses. It is built using advanced technology, with a high-quality oxide layer and low gate charge, and is designed for use in both industrial and consumer applications. The STP80NF70 is incredibly durable, with a high-temperature rating of 175°C, making it well-suited for use in harsh environments.

This device has been designed specifically for use in high-powered electronics systems, where efficiency and performance are critical. It is a highly reliable and efficient device that can withstand high levels of voltage and current, while maintaining its performance over an extended period of time. With its advanced design and technological features, the STP80NF70 provides an ideal solution for a wide range of power applications, from industrial automation and motor controls to consumer electronics and telecommunications. Overall, the STP80NF70 is a top-of-the-line power MOSFET transistor, designed for maximum efficiency, performance, and durability
Product Attributes
Current - Continuous Drain (Id) @ 25°C 98A (Tc)
Drain to Source Voltage (Vdss) 68 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 25 V
Mounting Type Through Hole
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-220-3
Packaging Tube
Part Status Not For New Designs
Power Dissipation (Max) 190W (Tc)
Rds On (Max) @ Id, Vgs 9.8mOhm @ 40A, 10V
Supplier Device Package TO-220
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 250µA

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