onsemi MMBF170

onsemi - MMBF170

Stock Code
000545

Manufacturer / Brand

Part Number
MMBF170

Unit Price
$0.2600

Factory Lead-Time
27 Weeks

Short Description
N-channel JFET transistor

In Stock: 21558


Qty Unit Price Total Price Discount
1 $0.2600 $0.2600
10 $0.2140 $2.1400 -17.69%
100 $0.1140 $11.4000 -56.15%
500 $0.0749 $37.4500 -71.19%
1000 $0.0510 $51.0000 -80.38%
3000 $0.0442 $132.6000 -83%
6000 $0.0396 $237.6000 -84.77%
9000 $0.0390 $351.0000 -85%
Description
The ON Semiconductor MMBF170 is a small-signal N-channel JFET (junction field-effect transistor) designed specifically for high gain and low noise amplifier applications. The JFET offers low power consumption and high input impedance, making it suitable for use in a wide range of electronic circuits. The MMBF170 comes in a surface mount package and supports a maximum voltage rating of 25V and maximum current rating of 10mA. The device has a drain-source on-state resistance (RDSON) of less than 150 ohms, which allows it to achieve a low cutoff frequency and high gain for small-signal amplifier applications.

The MMBF170 also supports a low input offset voltage (VGS(off)) which helps reduce the noise level in the circuit. Furthermore, the device features a low thermal resistance junction-to-ambient (RθJA) which enhances the thermal management of the chip, supporting a reliable operation of the device at high temperatures. Alongside its plethora of features, the MMBF170 offers a storage temperature range of -65°C to 150°C, making it suitable for use in harsh environments. Overall, the ON Semiconductor MMBF170 is a reliable and effective JFET suitable for low noise, high gain amplifier applications
Product Attributes
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT)
Power Dissipation (Max) 300mW (Ta)
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
Supplier Device Package SOT-23-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3V @ 1mA

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