Vishay SI7461DP-T1-E3
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See Product Specifications.
See Product Specifications.
Stock Code
001275
001275
Manufacturer / Brand
Vishay
Part Number
SI7461DP-T1-E3
SI7461DP-T1-E3
Unit Price
$1.3900
$1.3900
Factory Lead-Time
35 Weeks
35 Weeks
Short Description
P-Channel MOSFET with 60V drain-source voltage and 30A drain current for power switching applications
P-Channel MOSFET with 60V drain-source voltage and 30A drain current for power switching applications
Datasheet
In Stock: 2644
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.3900 | $1.3900 | |
| 10 | $1.2600 | $12.6000 | -9.35% |
| 100 | $1.1900 | $119.0000 | -14.39% |
Description
The Vishay SI7461DP-T1-E3 is a power MOSFET device designed for use in high performance switching applications. This device features a low on-state resistance of just 4.3mΩ, making it an excellent choice for use in low-voltage power converter circuits.
The device is constructed using Vishay's proprietary TrenchFET technology, which allows for the creation of a high-density cell structure that ensures fast switching characteristics and low power dissipation. Additionally, the device features a compact SOT-223 package, which allows for easy integration into existing designs. The device is rated for a maximum drain-source voltage of 30V and a maximum continuous drain current of 40A, making it an excellent choice for high power applications. Overall, the Vishay SI7461DP-T1-E3 is an excellent choice for engineers looking to design high-performance switching circuits with minimal power losses
The device is constructed using Vishay's proprietary TrenchFET technology, which allows for the creation of a high-density cell structure that ensures fast switching characteristics and low power dissipation. Additionally, the device features a compact SOT-223 package, which allows for easy integration into existing designs. The device is rated for a maximum drain-source voltage of 30V and a maximum continuous drain current of 40A, making it an excellent choice for high power applications. Overall, the Vishay SI7461DP-T1-E3 is an excellent choice for engineers looking to design high-performance switching circuits with minimal power losses
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 1.9W (Ta) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 14.4A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
