Infineon BSC190N15NS3GATMA1
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See Product Specifications.
See Product Specifications.
Stock Code
002737
002737
Manufacturer / Brand
Infineon
Part Number
BSC190N15NS3GATMA1
BSC190N15NS3GATMA1
Unit Price
$2.0000
$2.0000
Factory Lead-Time
48 Weeks
48 Weeks
Short Description
650V CoolMOS™ N-channel Power MOSFET
650V CoolMOS™ N-channel Power MOSFET
In Stock: 4445
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $2.0000 | $2.0000 | |
| 10 | $1.8000 | $18.0000 | -10% |
| 100 | $1.4700 | $147.0000 | -26.5% |
| 500 | $1.2600 | $630.0000 | -37% |
| 1000 | $1.0600 | $1,060.0000 | -47% |
| 2000 | $1.0100 | $2,020.0000 | -49.5% |
Description
The Infineon BSC190N15NS3GATMA1 is a N-channel Power MOSFET transistor. It is designed to handle high voltage and high current loads in a wide range of applications such as power supplies, motor control, and inverters. The BSC190N15NS3GATMA1 is built with advanced Superjunction technology, which significantly reduces on-state resistance while enhancing switching performance. With a maximum drain-source voltage of 150V and a maximum continuous drain current of 190A, this MOSFET is capable of delivering high power and efficiency. The transistor is housed in a TO-220 full pack package with a thermally enhanced design that ensures optimal heat dissipation even at high operating temperatures. Additionally, the BSC190N15NS3GATMA1 features enhanced avalanche ruggedness, enabling it to withstand high voltage surges without damage.
In summary, the Infineon BSC190N15NS3GATMA1 is a high-performance N-channel MOSFET transistor that combines low on-state resistance, high voltage capability, and excellent switching performance. Its robust design and superior thermal management make it an ideal choice for high-power applications that require efficiency and reliability. The MOSFET is ideal for use in motor control, power supplies, and inverters, where high voltage and current capabilities are crucial for reliable operation. With its advanced technology and rugged construction, the BSC190N15NS3GATMA1 provides a reliable and efficient solution for demanding industrial and commercial applications
In summary, the Infineon BSC190N15NS3GATMA1 is a high-performance N-channel MOSFET transistor that combines low on-state resistance, high voltage capability, and excellent switching performance. Its robust design and superior thermal management make it an ideal choice for high-power applications that require efficiency and reliability. The MOSFET is ideal for use in motor control, power supplies, and inverters, where high voltage and current capabilities are crucial for reliable operation. With its advanced technology and rugged construction, the BSC190N15NS3GATMA1 provides a reliable and efficient solution for demanding industrial and commercial applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 75 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 50A, 10V |
| Supplier Device Package | PG-TDSON-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
