STMicroelectronics STB57N65M5
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See Product Specifications.
See Product Specifications.
Stock Code
002739
002739
Manufacturer / Brand
STMicroelectronics
Part Number
STB57N65M5
STB57N65M5
Unit Price
$8.0300
$8.0300
Factory Lead-Time
52 Weeks
52 Weeks
Short Description
Power MOSFET, 650V, 57A, 5.7mΩ
Power MOSFET, 650V, 57A, 5.7mΩ
In Stock: 1837
Qty | Unit Price | Total Price | Discount |
---|---|---|---|
1 | $8.0300 | $8.0300 | |
10 | $7.2500 | $72.5000 | -9.71% |
100 | $6.0000 | $600.0000 | -25.28% |
500 | $5.2300 | $2,615.0000 | -34.87% |
Description
The STMicroelectronics STB57N65M5 is a power MOSFET transistor that is designed for use in high voltage power conversion applications. It features a maximum voltage rating of 650 volts, and a maximum current rating of 57 amps, making it suitable for a wide range of applications.
The STB57N65M5 is constructed using an advanced process technology that allows it to achieve low on-resistance without sacrificing other key performance characteristics such as gate charge and switching time. This means that it provides fast switching times, low power dissipation, and high reliability, making it particularly well-suited for use in high frequency applications such as switching power supplies, motor controls, and other applications where efficiency and reliability are essential. Additionally, the device is housed in a compact TO-247 package that allows for easy integration and mounting in a variety of different applications
The STB57N65M5 is constructed using an advanced process technology that allows it to achieve low on-resistance without sacrificing other key performance characteristics such as gate charge and switching time. This means that it provides fast switching times, low power dissipation, and high reliability, making it particularly well-suited for use in high frequency applications such as switching power supplies, motor controls, and other applications where efficiency and reliability are essential. Additionally, the device is housed in a compact TO-247 package that allows for easy integration and mounting in a variety of different applications
Product Attributes
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 100 V |
Mounting Type | Surface Mount |
Operating Temperature | 150°C (TJ) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Packaging | Cut Tape (CT) |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 63mOhm @ 21A, 10V |
Supplier Device Package | D²PAK (TO-263) |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±25V |
Vgs(th) (Max) @ Id | 5V @ 250µA |