Infineon IPB65R045C7ATMA1
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See Product Specifications.
See Product Specifications.
Stock Code
005254
005254
Manufacturer / Brand
Infineon
Part Number
IPB65R045C7ATMA1
IPB65R045C7ATMA1
Unit Price
$7.2700
$7.2700
Factory Lead-Time
8 Weeks
8 Weeks
Short Description
Power MOSFET transistor, 650V voltage rating, 45A current rating, TO-263-7 package
Power MOSFET transistor, 650V voltage rating, 45A current rating, TO-263-7 package
In Stock: 4013
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $7.2700 | $7.2700 |
Description
The Infineon IPB65R045C7ATMA1 is a power MOSFET transistor designed for high-performance and energy-efficient applications. With a breakdown voltage of 650 volts and a maximum current of 45A, this device delivers exceptional performance in high-power circuits. It features an enhanced trench structure design that reduces the on-state resistance, thereby improving power efficiency and minimizing heat dissipation.
This device has a Gate-Source Threshold Voltage (VGS(th)) of 3.0V and a gate charge (Qg) of 148nC at a gate-source voltage of 10V. This makes it compatible with a wide range of PWM (pulse width modulation) control techniques. Additionally, the Infineon IPB65R045C7ATMA1 has a low gate capacitance (Ciss) of 5230pF, making it an ideal choice where fast switching is required. Applications of this device include power supplies, motor control, and other high-performance industrial, commercial and consumer electronic applications
This device has a Gate-Source Threshold Voltage (VGS(th)) of 3.0V and a gate charge (Qg) of 148nC at a gate-source voltage of 10V. This makes it compatible with a wide range of PWM (pulse width modulation) control techniques. Additionally, the Infineon IPB65R045C7ATMA1 has a low gate capacitance (Ciss) of 5230pF, making it an ideal choice where fast switching is required. Applications of this device include power supplies, motor control, and other high-performance industrial, commercial and consumer electronic applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 400 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT) |
| Part Status | Discontinued at Digi-Key |
| Power Dissipation (Max) | 227W (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 24.9A, 10V |
| Supplier Device Package | PG-TO263-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1.25mA |
