onsemi NDT2955
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
023515
023515
Manufacturer / Brand
onsemi
Part Number
NDT2955
NDT2955
Unit Price
$0.4550
$0.4550
Factory Lead-Time
45 Weeks
45 Weeks
Short Description
P-Channel Power MOSFET (60V, 12A)
P-Channel Power MOSFET (60V, 12A)
Datasheet
In Stock: 16741
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.4550 | $0.4550 | |
| 10 | $0.3980 | $3.9800 | -12.53% |
| 100 | $0.3050 | $30.5000 | -32.97% |
| 500 | $0.2410 | $120.5000 | -47.03% |
| 1000 | $0.1930 | $193.0000 | -57.58% |
| 2000 | $0.1750 | $350.0000 | -61.54% |
Description
The ONSEMI NDT2955 is a Power MOSFET that is designed for high voltage, high speed switching applications in power supplies, lighting, motor control and other power electronic devices. This MOSFET has a maximum drain-source voltage of 60V and a continuous drain current of up to 5A. It also has a low on-state resistance of 0.38 ohms, making it efficient for power management.
Furthermore, the NDT2955 MOSFET features a fast switching speed of 30ns, allowing it to switch on and off quickly without significant delays. This is essential in applications where speed is crucial, such as in inverters or converters. The device also comes in a TO-220 package, which provides easy mounting and allows efficient heat dissipation to help prevent thermal damage. Overall, the ONSEMI NDT2955 is a reliable and efficient MOSFET that is suitable for many high voltage switching applications
Furthermore, the NDT2955 MOSFET features a fast switching speed of 30ns, allowing it to switch on and off quickly without significant delays. This is essential in applications where speed is crucial, such as in inverters or converters. The device also comes in a TO-220 package, which provides easy mounting and allows efficient heat dissipation to help prevent thermal damage. Overall, the ONSEMI NDT2955 is a reliable and efficient MOSFET that is suitable for many high voltage switching applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 601 pF @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-261-4, TO-261AA |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 3W (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 2.5A, 10V |
| Supplier Device Package | SOT-223-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
