onsemi NTR3A30PZT1G

The ON Semiconductor NTR3A30PZT1G is a high performance N-channel MOSFET that is capable of switching high currents with low on-resistance. It is designed for use in power management applications such as DC-DC converters, battery chargers, motor drives, and other high efficiency power systems. This device features a maximum drain-source voltage of 30V, a continuous drain current of 3A, and a typical on-resistance of 44mΩ at 10V. The NTR3A30PZT1G is housed in a compact SOT-223 package which provides both small size and low thermal resistance for efficient heat dissipation. This device also includes an integrated Schottky diode which reduces power dissipation and increases efficiency by minimizing reverse recovery time.

In addition to its impressive electrical performance, the ON Semiconductor NTR3A30PZT1G also features robust design and construction. It has a low gate charge which results in less switching loss and lower electromagnetic interference (EMI). The device also includes a built-in zener clamp which protects the MOSFET from voltage spikes and transients. This feature enhances the reliability and longevity of the device in harsh environments. The NTR3A30PZT1G is RoHS compliant, halogen-free, and lead-free, making it an excellent choice for applications that require compliance with environmental regulations

Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1651 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Cut Tape (CT)
Power Dissipation (Max)	480mW (Ta)
Rds On (Max) @ Id, Vgs	38mOhm @ 3A, 4.5V
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 250µA