Vishay SQM100P10-19L_GE3
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See Product Specifications.
See Product Specifications.
Stock Code
027769
027769
Manufacturer / Brand
Vishay
Part Number
SQM100P10-19L_GE3
SQM100P10-19L_GE3
Unit Price
$2.2300
$2.2300
Factory Lead-Time
110 Weeks
110 Weeks
Short Description
Power MOSFET transistor: N-channel, 100V, 100A, 19mΩ, surface mount, TO-252 package
Power MOSFET transistor: N-channel, 100V, 100A, 19mΩ, surface mount, TO-252 package
Datasheet
In Stock: 2835
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $2.2300 | $2.2300 | |
| 10 | $2.0000 | $20.0000 | -10.31% |
| 100 | $1.6400 | $164.0000 | -26.46% |
Description
The Vishay SQM100P10-19L_GE3 is a surface-mount power MOSFET that is designed to provide high performance and reliability in a variety of applications. This MOSFET features a low on-resistance rating of 10 milliohms and a maximum current capacity of 100 amps. It is built using the latest silicon carbide technology, which offers superior performance compared to traditional silicon-based devices.
The SQM100P10-19L_GE3 is highly efficient and can operate at high temperatures without degradation. It is also designed to be easy to install, with a compact footprint and simple surface-mount package. Its high switching speed makes it ideal for use in applications with high-frequency switching requirements, such as power converters, switching regulators, and motor drives. Additionally, the MOSFET's low gate charge and low gate resistance ensure quick and efficient switching, leading to lower power losses and improved overall system efficiency
The SQM100P10-19L_GE3 is highly efficient and can operate at high temperatures without degradation. It is also designed to be easy to install, with a compact footprint and simple surface-mount package. Its high switching speed makes it ideal for use in applications with high-frequency switching requirements, such as power converters, switching regulators, and motor drives. Additionally, the MOSFET's low gate charge and low gate resistance ensure quick and efficient switching, leading to lower power losses and improved overall system efficiency
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14100 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 375W (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 30A, 10V |
| Supplier Device Package | TO-263 (D²Pak) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
