onsemi FQD7P20TM

The ONSEMI FQD7P20TM is a MOSFET transistor that is ideal for use in low-voltage applications. This transistor has a maximum drain-source voltage of 200 volts and a maximum continuous drain current of 7 amps. It features a low on-resistance of 0.27 ohms, which means that it is highly efficient, and it is also capable of operating at high frequencies. The FQD7P20TM has been designed using a high-density cell structure that helps to reduce the overall size of the component while still maintaining its high performance.

The ONSEMI FQD7P20TM is a TO-252 surface-mount package MOSFET that offers several benefits. The TO-252 package has a low profile which makes it ideal for use in compact designs where space is at a premium. Additionally, it has a high thermal efficiency that allows it to handle higher power levels without overheating. The MOSFET transistor also has a low gate charge that makes it easy to drive and helps to reduce switching losses. The FQD7P20TM MOSFET transistor is generally used in power supply circuits, motor control circuits, and audio amplifiers

Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	770 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging	Cut Tape (CT)
Power Dissipation (Max)	2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs	690mOhm @ 2.85A, 10V
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA