Texas Instruments CSD19502Q5B

Texas Instruments - CSD19502Q5B

Stock Code
030127

Manufacturer / Brand

Part Number
CSD19502Q5B

Unit Price
$1.6400

Factory Lead-Time
9 Weeks

Short Description
Power MOSFET for high efficiency DC/DC converters

In Stock: 13359


Qty Unit Price Total Price Discount
1 $1.6400 $1.6400
10 $1.4800 $14.8000 -9.76%
100 $1.1900 $119.0000 -27.44%
500 $0.9750 $487.5000 -40.55%
1000 $0.8360 $836.0000 -49.02%
Description
The Texas Instruments CSD19502Q5B is a highly-efficient 100V N-channel power MOSFET designed for use in high-power applications. It features a low RDS(on) of 3.1mOhms and a maximum current rating of 200A, making it well-suited for use in power supplies, motor control, and other high-current applications.

The device utilizes advanced MOSFET technology to achieve its high performance and efficiency, with a high-temperature rating of up to 175°C and a low gate charge of just 86nC. Additionally, its compact QFN package offers a small footprint for efficient PCB design and assembly. With its excellent thermal performance and high current rating, the CSD19502Q5B is an ideal choice for a wide range of applications requiring high power and reliability
Product Attributes
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drain to Source Voltage (Vdss) 80 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4870 pF @ 40 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 8-PowerTDFN
Packaging Cut Tape (CT)
Power Dissipation (Max) 3.1W (Ta), 195W (Tc)
Rds On (Max) @ Id, Vgs 4.1mOhm @ 19A, 10V
Supplier Device Package 8-VSON-CLIP (5x6)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3.3V @ 250µA

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