Vishay SUD50P04-08-BE3
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
031643
031643
Manufacturer / Brand
Vishay
Part Number
SUD50P04-08-BE3
SUD50P04-08-BE3
Unit Price
$0.9750
$0.9750
Factory Lead-Time
95 Weeks
95 Weeks
Short Description
N-channel Power MOSFET, 50A, 40V, D-PAK package
N-channel Power MOSFET, 50A, 40V, D-PAK package
Datasheet
In Stock: 1224
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.9750 | $0.9750 | |
| 10 | $0.8700 | $8.7000 | -10.77% |
| 100 | $0.6780 | $67.8000 | -30.46% |
| 500 | $0.5600 | $280.0000 | -42.56% |
| 1000 | $0.4420 | $442.0000 | -54.67% |
Description
The Vishay SUD50P04-08-BE3 is a power MOSFET transistor that is designed for high efficiency and low switching losses in power conversion applications. It features a drain-source voltage of 40V, a maximum continuous drain current of 50A, and a low on-state resistance of 8mΩ. These features allow for high performance switching and efficient power conversion in applications such as motor control, power supplies, and DC-DC converters.
The transistor also features a fast switching speed and low gate charge, making it ideal for high frequency applications. It is housed in a TO-252AA surface-mount package, which allows for easy installation and integration into existing circuits. The Vishay SUD50P04-08-BE3 is a reliable and efficient solution for power conversion applications that require high performance and low losses
The transistor also features a fast switching speed and low gate charge, making it ideal for high frequency applications. It is housed in a TO-252AA surface-mount package, which allows for easy installation and integration into existing circuits. The Vishay SUD50P04-08-BE3 is a reliable and efficient solution for power conversion applications that require high performance and low losses
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 3W (Ta), 100W (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
