onsemi 1N5822
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
002880
002880
Manufacturer / Brand
onsemi
Part Number
1N5822
1N5822
Categories
Unit Price
$5.1700
$5.1700
Factory Lead-Time
37 Weeks
37 Weeks
Short Description
Schottky Barrier Rectifier Diode
Schottky Barrier Rectifier Diode
Datasheet
In Stock: 7601
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $5.1700 | $5.1700 | |
| 10 | $0.4210 | $4.2100 | -91.86% |
| 500 | $0.3020 | $151.0000 | -94.16% |
| 1000 | $0.2640 | $264.0000 | -94.89% |
| 1700 | $0.2310 | $392.7000 | -95.53% |
| 3400 | $0.1970 | $669.8000 | -96.19% |
| 8500 | $0.1740 | $1,479.0000 | -96.63% |
Description
The Onsemi 1N5822 is a Schottky Rectifier diode that is designed to enable high efficiency, low loss power conversion in a wide range of applications. This diode features a low forward voltage drop and a high surge capability, which makes it ideal for use in high-frequency switching power supplies, freewheeling diodes, reverse battery protection, and other applications that require high current rectification.
With a maximum forward current of 3A and a peak reverse voltage of 40V, the 1N5822 diode is capable of handling high-speed switching and high surge currents. Its Schottky barrier design, which allows for a fast recovery time, results in low junction capacitance and low power losses. This makes it ideal for use in applications such as DC-DC converters, voltage regulators, and solar panel arrays. Moreover, the 1N5822 diode is packaged in a surface mount DO-201AD package, which makes it easy to handle and mount on printed circuit boards
With a maximum forward current of 3A and a peak reverse voltage of 40V, the 1N5822 diode is capable of handling high-speed switching and high surge currents. Its Schottky barrier design, which allows for a fast recovery time, results in low junction capacitance and low power losses. This makes it ideal for use in applications such as DC-DC converters, voltage regulators, and solar panel arrays. Moreover, the 1N5822 diode is packaged in a surface mount DO-201AD package, which makes it easy to handle and mount on printed circuit boards
Product Attributes
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V |
| Mounting Type | Through Hole |
| Notification | QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Package / Case | B, Axial |
| Packaging | Bulk |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Supplier Device Package | B, Axial |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
