Infineon IRFS3006-7

Infineon - IRFS3006-7

Stock Code
001565

Manufacturer / Brand

Part Number
IRFS3006-7

Unit Price
$5.1000

Factory Lead-Time
8 Weeks

Short Description
MOSFET power transistor for high current applications

In Stock: 322


Qty Unit Price Total Price Discount
1 $5.1000 $5.1000
10 $5.0000 $50.0000 -1.96%
100 $4.0000 $400.0000 -21.57%
Description
The Infineon IRFS3006-7 is a high-quality MOSFET transistor that is designed for use in a variety of different applications. It features low on-resistance, low input capacitance, and fast switching speeds, making it an ideal choice for use in switching power supplies, motor control circuits, and other high-performance applications. The device is also designed to be highly reliable, with a robust construction that ensures long-term performance and stability even in harsh operating conditions.

One of the key features of the IRFS3006-7 is its low on-resistance, which enables it to minimize power loss and improve overall efficiency in high-power applications. Additionally, the device's low input capacitance helps to reduce the power consumed by the gate drive circuitry, further improving overall system efficiency. The fast switching speeds of the IRFS3006-7 make it ideal for use in high-frequency applications, where rapid switching is necessary to maintain high power output while minimizing heat dissipation. Finally, the device's robust construction and high-quality materials ensure long-term reliability and performance, even when subjected to demanding operating conditions
Product Attributes
Current - Continuous Drain (Id) @ 25°C 240A (Tc)
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
ECCN EAR99
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
HTSUS 8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds 8850 pF @ 50 V
Mfr Infineon Technologies
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package Bulk
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Power Dissipation (Max) 375W (Tc)
Rds On (Max) @ Id, Vgs 2.1mOhm @ 168A, 10V
REACH Status REACH Unaffected
RoHS Status Not applicable
Series HEXFET®
Supplier Device Package D2PAK (7-Lead)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 250µA

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