Vishay SI7190DP-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
002391
002391
Manufacturer / Brand
Vishay
Part Number
SI7190DP-T1-GE3
SI7190DP-T1-GE3
Unit Price
$1.3900
$1.3900
Factory Lead-Time
43 Weeks
43 Weeks
Short Description
N-channel MOSFET in a PowerPAK SO-8 package
N-channel MOSFET in a PowerPAK SO-8 package
Datasheet
In Stock: 2597
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.3900 | $1.3900 | |
| 10 | $1.2600 | $12.6000 | -9.35% |
| 100 | $1.1900 | $119.0000 | -14.39% |
Description
The Vishay SI7190DP-T1-GE3 is a MOSFET semiconductor device designed for high efficiency power switching applications. It consists of a p-channel DMOS structure with a low on-resistance of 4.5 milliohms and a maximum drain-source voltage of -30 volts. The device also features a gate-source voltage range of -16 to +20 volts and a maximum continuous drain current of -34 amps.
This MOSFET device is designed to operate at high frequencies with minimal power loss due to its optimized gate charge and capacitance. In addition, it is built using advanced silicon technology, which ensures stability and reliability during operation. The Vishay SI7190DP-T1-GE3 is ideal for various applications that require a high-efficiency power switch, such as DC-DC converters, motor control, and power supplies. Overall, it's a highly-efficient and reliable power switching solution for various industrial and automotive applications
This MOSFET device is designed to operate at high frequencies with minimal power loss due to its optimized gate charge and capacitance. In addition, it is built using advanced silicon technology, which ensures stability and reliability during operation. The Vishay SI7190DP-T1-GE3 is ideal for various applications that require a high-efficiency power switch, such as DC-DC converters, motor control, and power supplies. Overall, it's a highly-efficient and reliable power switching solution for various industrial and automotive applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2214 pF @ 125 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
| Rds On (Max) @ Id, Vgs | 118mOhm @ 4.4A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
