Vishay SI7252DP-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
003378
003378
Manufacturer / Brand
Vishay
Part Number
SI7252DP-T1-GE3
SI7252DP-T1-GE3
Unit Price
$1.4100
$1.4100
Factory Lead-Time
91 Weeks
91 Weeks
Short Description
Dual N-Channel 60V 18A MOSFET in PowerPAK SO-8 package
Dual N-Channel 60V 18A MOSFET in PowerPAK SO-8 package
Datasheet
In Stock: 959
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.4100 | $1.4100 | |
| 10 | $1.2700 | $12.7000 | -9.93% |
| 100 | $1.0200 | $102.0000 | -27.66% |
| 500 | $0.8360 | $418.0000 | -40.71% |
| 1000 | $0.6930 | $693.0000 | -50.85% |
Description
The Vishay SI7252DP-T1-GE3 is an enhancement mode N-channel power MOSFET that is specifically designed for low voltage, high speed applications. It features a low on-resistance of only 4 mΩ, which makes it suitable for use in power management and battery management applications. The MOSFET is housed in a compact PowerPAK SC-70 package, which is 60% smaller than traditional SOT-223 packages. It also features a thermal resistance of only 105°C/W, which means it can operate at high temperatures without overheating. The MOSFET is RoHS-compliant and can operate over a temperature range of -55°C to 150°C. Other notable features include a gate-source voltage of ±20V, a drain-source voltage of 30V, and a continuous drain current of 10A.
In terms of its applications, the Vishay SI7252DP-T1-GE3 can be used in a variety of industries, including consumer electronics, telecommunications, automotive, and industrial control. It is often used in power management circuits, where it can regulate and control the flow of power to different devices. It can also be used in battery management circuits, where it can help to prevent overcharging or over-discharging of batteries. Its low on-resistance and high switching speed make it particularly well-suited for use in automotive applications, where it can help to improve fuel efficiency and reduce emissions. Overall, the Vishay SI7252DP-T1-GE3 is a versatile and reliable MOSFET that offers high performance and a compact form factor, making it an ideal choice for a wide range of applications
In terms of its applications, the Vishay SI7252DP-T1-GE3 can be used in a variety of industries, including consumer electronics, telecommunications, automotive, and industrial control. It is often used in power management circuits, where it can regulate and control the flow of power to different devices. It can also be used in battery management circuits, where it can help to prevent overcharging or over-discharging of batteries. Its low on-resistance and high switching speed make it particularly well-suited for use in automotive applications, where it can help to improve fuel efficiency and reduce emissions. Overall, the Vishay SI7252DP-T1-GE3 is a versatile and reliable MOSFET that offers high performance and a compact form factor, making it an ideal choice for a wide range of applications
Product Attributes
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 36.7A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170pF @ 50V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 Dual |
| Packaging | Cut Tape (CT) |
| Power - Max | 46W |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 15A, 10V |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
