onsemi NTF3055L108T1G

The Onsemi NTF3055L108T1G is a single N-channel MOSFET transistor with a maximum drain-source voltage of 60V and maximum continuous drain current of 33A. This MOSFET is designed for use in advanced power management applications including load switches, DC-DC converters, and motor drives. The device features a low RDS(on) of 10.5mΩ maximum at VGS of 10V, which reduces power loss and increases efficiency. It also has a fast switching time of less than 70ns, enabling high frequency operation.

The NTF3055L108T1G has built-in protection features such as thermal shutdown and overcurrent protection. It has an operating temperature range of -55°C to +175°C and a Pb-free terminal finish. The device is housed in a DPAK package with a maximum junction-to-case thermal resistance of 2.5°C/W. The MOSFET is RoHS compliant and meets the standards set by UL, IEC and CSA. The Onsemi NTF3055L108T1G is an ideal choice for applications that require high performance, reliability, and efficiency

Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-261-4, TO-261AA
Packaging	Cut Tape (CT)
Power Dissipation (Max)	1.3W (Ta)
Rds On (Max) @ Id, Vgs	120mOhm @ 1.5A, 5V
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±15V
Vgs(th) (Max) @ Id	2V @ 250µA