Infineon IPP65R045C7XKSA1

Infineon IPP65R045C7XKSA1 is a low voltage MOSFET transistor that is designed to operate in various applications that require high power density and efficiency with a low power consumption profile. The transistor has a P-channel enhancement mode and has been manufactured using high-quality materials to ensure high performance, reliability, and durability. It has a gate-source voltage of -20V and a continuous drain current of 65A.

The transistor is compact in size and comes with a TO-220 package. It has been designed with advanced features such as a fast switching speed, low gate charge, and low on-resistance making it ideal for use in various high-performance applications that require efficient and reliable power management. Applications where the Infineon IPP65R045C7XKSA1 MOSFET transistor can be used include but not limited to: telecom equipment, power supplies, servers, power factor correction circuits, and motor drives. Overall, the Infineon IPP65R045C7XKSA1 is a top-quality low voltage MOSFET transistor that offers high performance, efficiency, and reliability in various high power density applications

Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4340 pF @ 400 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3
Packaging	Tube
Power Dissipation (Max)	227W (Tc)
Rds On (Max) @ Id, Vgs	45mOhm @ 24.9A, 10V
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1.25mA