Vishay SI3407DV-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
019741
019741
Manufacturer / Brand
Vishay
Part Number
SI3407DV-T1-GE3
SI3407DV-T1-GE3
Unit Price
$0.3320
$0.3320
Factory Lead-Time
52 Weeks
52 Weeks
Short Description
N-channel MOSFET with 40V drain-to-source voltage and 38A continuous drain current capability
N-channel MOSFET with 40V drain-to-source voltage and 38A continuous drain current capability
Datasheet
In Stock: 53742
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.3320 | $0.3320 | |
| 10 | $0.2810 | $2.8100 | -15.36% |
| 100 | $0.2100 | $21.0000 | -36.75% |
| 500 | $0.1650 | $82.5000 | -50.3% |
| 1000 | $0.1280 | $128.0000 | -61.45% |
| 3000 | $0.1160 | $348.0000 | -65.06% |
Description
The Vishay SI3407DV-T1-GE3 is a power MOSFET designed to handle high current levels of up to 52A with a low on-state resistance of 6.5mΩ. It features a fast switching time of only 13ns and is capable of operating at temperatures up to 175°C. The device is housed in a PowerPAK 1212-8 package, which offers a compact design while maintaining excellent heat dissipation. The MOSFET is ideal for use in high-power applications such as motor control, power tooling, and other high-current circuits.
The MOSFET offers a variety of protection features such as thermal shutdown, over-current protection, and over-voltage protection. It is designed to meet the industry's most stringent standards, including RoHS, Halogen-Free, and Reach standards. The device is ideal for use in harsh environments as it is designed to be resilient to temperature alterations, voltage fluctuations, and power surges. Additionally, it's highly efficient and energy-saving. Therefore, it's suitable for a wide range of industrial and automotive applications that require high performance, reliability, and durability
The MOSFET offers a variety of protection features such as thermal shutdown, over-current protection, and over-voltage protection. It is designed to meet the industry's most stringent standards, including RoHS, Halogen-Free, and Reach standards. The device is ideal for use in harsh environments as it is designed to be resilient to temperature alterations, voltage fluctuations, and power surges. Additionally, it's highly efficient and energy-saving. Therefore, it's suitable for a wide range of industrial and automotive applications that require high performance, reliability, and durability
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 4.2W (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7.5A, 4.5V |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
