onsemi FDD86567-F085
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See Product Specifications.
See Product Specifications.
Stock Code
020483
020483
Manufacturer / Brand
onsemi
Part Number
FDD86567-F085
FDD86567-F085
Unit Price
$1.5900
$1.5900
Factory Lead-Time
66 Weeks
66 Weeks
Short Description
N-channel Power Mosfet, 80V, 64.5A, 5.5mΩ
N-channel Power Mosfet, 80V, 64.5A, 5.5mΩ
Datasheet
In Stock: 1793
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.5900 | $1.5900 | |
| 10 | $1.4200 | $14.2000 | -10.69% |
| 100 | $1.1400 | $114.0000 | -28.3% |
| 500 | $0.9390 | $469.5000 | -40.94% |
| 1000 | $0.7780 | $778.0000 | -51.07% |
Description
The Onsemi FDD86567-F085 is an N-channel Mosfet transistor that is designed for use in various applications, including power supply, motor control, and switch mode power supply. This robust and high-performance Mosfet transistor has a maximum drain-source voltage of 150V and a maximum continuous drain current of 28A, making it a powerful and reliable choice for demanding applications.
The device features low on-resistance and fast switching characteristics, which enable it to operate with high efficiency and reduced power losses. Moreover, the Onsemi FDD86567-F085 is compatible with both through-hole and surface mount packages, making it easy to integrate into different applications. Therefore, this transistor is an ideal choice for applications that require high-power density, high reliability, and optimal performance
The device features low on-resistance and fast switching characteristics, which enable it to operate with high efficiency and reduced power losses. Moreover, the Onsemi FDD86567-F085 is compatible with both through-hole and surface mount packages, making it easy to integrate into different applications. Therefore, this transistor is an ideal choice for applications that require high-power density, high reliability, and optimal performance
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4950 pF @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 227W (Tj) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 80A, 10V |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
