Vishay SI2315BDS-T1-E3
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See Product Specifications.
See Product Specifications.
Stock Code
022948
022948
Manufacturer / Brand
Vishay
Part Number
SI2315BDS-T1-E3
SI2315BDS-T1-E3
Unit Price
$0.3510
$0.3510
Factory Lead-Time
40 Weeks
40 Weeks
Short Description
N-Channel MOSFET with 20V maximum drain-source voltage and 5A maximum continuous drain current
N-Channel MOSFET with 20V maximum drain-source voltage and 5A maximum continuous drain current
Datasheet
In Stock: 91382
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.3510 | $0.3510 | |
| 10 | $0.3000 | $3.0000 | -14.53% |
| 100 | $0.2240 | $22.4000 | -36.18% |
| 500 | $0.1760 | $88.0000 | -49.86% |
| 1000 | $0.1360 | $136.0000 | -61.25% |
Description
The Vishay SI2315BDS-T1-E3 is a P-Channel MOSFET transistor with a low on-resistance and a high-speed switching capability. Its compact SOT-23 package makes it ideal for use in space-constrained applications.
This MOSFET features a voltage rating of -20V and a continuous drain current of -3.3A. Its gate threshold voltage ranges from -0.8V to -1.8V, allowing for flexibility in its use. With a typical drain-source on-resistance of just 90mOhms, this transistor boasts high efficiency and low power dissipation. It also has a high-speed switching capability, with a typical turn-on and turn-off time of just 7ns and 9ns, respectively. All of these features make the Vishay SI2315BDS-T1-E3 an excellent choice for a variety of applications, from battery-powered devices to power management circuits
This MOSFET features a voltage rating of -20V and a continuous drain current of -3.3A. Its gate threshold voltage ranges from -0.8V to -1.8V, allowing for flexibility in its use. With a typical drain-source on-resistance of just 90mOhms, this transistor boasts high efficiency and low power dissipation. It also has a high-speed switching capability, with a typical turn-on and turn-off time of just 7ns and 9ns, respectively. All of these features make the Vishay SI2315BDS-T1-E3 an excellent choice for a variety of applications, from battery-powered devices to power management circuits
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 715 pF @ 6 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 750mW (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.85A, 4.5V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
