Infineon BSS131H6327XTSA1
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See Product Specifications.
See Product Specifications.
Stock Code
025335
025335
Manufacturer / Brand
Infineon
Part Number
BSS131H6327XTSA1
BSS131H6327XTSA1
Unit Price
$0.2800
$0.2800
Factory Lead-Time
52 Weeks
52 Weeks
Short Description
N-channel MOSFET transistor for switching applications
N-channel MOSFET transistor for switching applications
In Stock: 9248
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.2800 | $0.2800 | |
| 10 | $0.2130 | $2.1300 | -23.93% |
| 100 | $0.1330 | $13.3000 | -52.5% |
| 500 | $0.0907 | $45.3500 | -67.61% |
| 1000 | $0.0697 | $69.7000 | -75.11% |
Description
The Infineon BSS131H6327XTSA1 is a N-channel MOSFET transistor designed for low voltage applications. It features a maximum drain-source voltage of 20V, a drain current of 1.3A, and a low on-resistance of 130mOhms. With its small and compact SOT-23-3 package, the BSS131H6327XTSA1 is ideal for portable and low power electronic devices.
This MOSFET transistor also has a fast switching speed and a low gate threshold voltage, making it suitable for power management applications such as load switches, battery chargers, and DC-DC converters. It also has a high thermal conductivity and is designed for high-temperature environments, ensuring reliable operation even in harsh conditions. Overall, the Infineon BSS131H6327XTSA1 is a highly efficient and reliable MOSFET transistor that can greatly enhance the performance and functionality of low voltage electronics
This MOSFET transistor also has a fast switching speed and a low gate threshold voltage, making it suitable for power management applications such as load switches, battery chargers, and DC-DC converters. It also has a high thermal conductivity and is designed for high-temperature environments, ensuring reliable operation even in harsh conditions. Overall, the Infineon BSS131H6327XTSA1 is a highly efficient and reliable MOSFET transistor that can greatly enhance the performance and functionality of low voltage electronics
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 110mA (Ta) |
| Drain to Source Voltage (Vdss) | 240 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 77 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 360mW (Ta) |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 100mA, 10V |
| Supplier Device Package | PG-SOT23 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.8V @ 56µA |
