Vishay SQ3427EV-T1_GE3

The Vishay SQ3427EV-T1_GE3 is a 30V dual n-channel MOSFET that is designed for use in power applications. It has a low on-resistance of only 13 milliohms, which makes it ideal for use in high current designs. The MOSFET is housed in a PowerPAK SO-8 package, which is industry standard and provides excellent thermal performance. Additionally, the package has a small footprint, which saves board space and reduces the overall size of the design. The device also features a low gate charge, which allows for fast switching times and reduces switching losses. Overall, the Vishay SQ3427EV-T1_GE3 is a versatile and high-performing MOSFET that is ideal for a wide range of power applications.

In summary, the Vishay SQ3427EV-T1_GE3 is a dual n-channel MOSFET that provides excellent power performance. It has a low on-resistance, a small package, and a low gate charge, making it suitable for use in high current designs where fast switching is critical. Its PowerPAK SO-8 package provides superior thermal performance and saves board space, making it an ideal choice for power applications such as motor control, DC-DC converters, and power supplies. Its high-performance features make it a versatile and reliable choice for a wide range of power electronics applications

Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Packaging	Cut Tape (CT)
Power Dissipation (Max)	5W (Tc)
Rds On (Max) @ Id, Vgs	95mOhm @ 4.5A, 10V
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA